Performing a calibration of a NAND flash memory block that is in an open state. An open state of the NAND flash memory block is detected, the NAND flash memory block comprising a plurality of memory pages, each of which comprising a plurality of memory cells. A group of pages of the NAND flash memory block being in an open state having comparable characteristics is identified. A calibration of read voltage values to pages of the group of identified pages is performed.