A method of managing programming errors in a multilevel NAND flash memory is provided. The multilevel NAND flash memory uses a two-pass programming algorithm - e.g., a first programming pass and a second programming pass - for programming a memory block being organized in pages, sharing a word line. The method comprises performing the first programming pass for at least one memory page, reading the at least one memory page between the first programming pass and the second programming pass, determining an error count value for the at least one programmed memory page, and responsive to determining that the error count value is below a threshold value, performing the second programming pass with active data.