Data recovery due to transient effects in NAND flash memories
US 11,221,911
Filing Date: 2019-10-11
Issue Date: 2022-01-11
A memory controller for recovering data due to transient effects of nonvolatile memory is provided. A memory controller receives a read request for a page stored in the nonvolatile memory. The memory controller issues a first read command. The memory controller records a time stamp for the first read command. In response to a failure during the first read command, the memory controller waits for a delay after the recorded time stamp and the memory controller issues a second read command to the page, wherein the second read command applies a read voltage offset that is dependent on the delay between the first read command and the second read command and at least one other parameter.